In-dram cycle-based levelization

摘要

Systems and methods are provided for in-DRAM cycle-based levelization. In a multi-rank, multi-lane memory system, an in-DRAM cycle-based levelization mechanism couples to a memory device in a rank and individually controls additive write latency and/or additive read latency for the memory device. The in-DRAM levelization mechanism ensures that a distribution of relative total write or read latencies across the lanes in the rank is substantially similar to that in another rank.