| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to reduce the size of a high capacity memory device by integrating a peripheral circuit with a memory device in one memory block. CONSTITUTION: A plurality of memory blocks are laminated on a substrate. The memory block has a transistor region and a memory region. An interlayer dielectric layer(11) is inserted between memory blocks. A plurality of gate electrodes(12B) are formed on the interlayer dielectric layer under a gate insulation layer. A channel layer(14) is formed on the gate insulation layer to be overlapped with a gate electrode. A plurality of source electrodes and drain electrodes are formed on the channel layer and are partially overlapped with the gate electrode. |
