| 摘要 |
PURPOSE: A semiconductor device and a forming method thereof are provided to improve overlay margin of an active region and a storage electrode contact by vertically forming a cell bit line profile. CONSTITUTION: A semiconductor substrate includes a cell region and a peripheral circuit region. An insulation layer is formed on the upper side of the semiconductor substrate of the cell region. A bit line contact hole(42) includes the etched insulation layer and exposes the semiconductor substrate. A bit line contact plug(46) is buried in the bit line contact hole. The bit line is formed on the upper side of the bit lien contact plug and has the same width as the bit line contact plug. A spacer is formed in the sidewall of the bit line contact hole and includes an oxide layer, a nitride layer or a laminate structure thereof. |
