| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a short between a gate pattern and a bit line contact plug by forming a bar type contact plug. CONSTITUTION: A device isolation region(220) is formed on a semiconductor substrate to define an active region. A gate material is formed on the active region and the device isolation region. A contact hole is formed by etching the gate material. A spacer(300) is formed on the sidewall of the contact hole. A contact plug is formed in the contact hole. A gate pattern(350) is formed by etching the gate material using a contact plug and a mask which shields gate materials between the contact plugs.
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