发明名称 METHOD FOR APPLYING ADJUSTMENT MARKS ON A SEMICONDUCTOR DISK
摘要 <p>The invention relates to a method for applying adjusting marks on a semiconductor disk. A small part structure consisting a non-metal is produced in an extensive metal layer and the semiconductor disk is subsequently planed in said region with the help of chemical and mechanical polishing. The structural sizes in the metal layer and the chemical-mechanical polishing process are adjusted to each other, in such a way that the small part non-metal structure protrudes above the extensive metal layer after polishing.</p>
申请公布号 EP1303880(B1) 申请公布日期 2012.01.25
申请号 EP20010955336 申请日期 2001.07.06
申请人 INFINEON TECHNOLOGIES AG 发明人 DIEWALD, WOLFGANG;MUEMMLER, KLAUS
分类号 H01L21/027;H01L23/544;H01L21/02 主分类号 H01L21/027
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