| 摘要 |
PURPOSE: A system and a method for etching silicon nitride are provided to permit quick etching of the silicon nitride using a small quantity of phosphoric acid. CONSTITUTION: A work-piece is arranged within a process chamber. Phosphoric acid is applied on the work-piece. The work-piece is heated to process temperature. The work-piece is irradiated in infrared ray light. The work-piece is maintained in the range of the process temperature. The work-piece is frozen by stopping the irradiation of the work-piece and applying deionized water on the work-piece. The work-piece is eliminated from the process chamber.
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