| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to prevent a short between a lower electrode contact plug and a lower electrode by arranging the lower electrode contact plug lower than an adjacent bit line with an etchback. CONSTITUTION: A bit line(360) is formed on a semiconductor substrate. A lower electrode contact plug(375) is formed between bit lines and is lower than the bit line. An interlayer dielectric layer and a sacrificial insulation layer are formed on the surface with the lower electrode contact plug. A lower electrode region is formed by etching a sacrificial insulation layer and an interlayer dielectric layer until the lower electrode contact plug is exposed by using a lower electrode mask as an etching mask. A lower electrode(410) is formed on the lower electrode region.
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