METHOD OF MEASURING CHARACTERISTICS OF A SEMICONDUCTOR ELEMENT AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for measuring the characteristic of a semiconductor device and a manufacturing method thereof are provided to precisely measure the internal pressure of a semiconductor device by applying a voltage from one side of a thickness direction of a semiconductor substrate between one side electrode and the other side electrode. CONSTITUTION: A gate electrode and a source electrode are formed on a surface part of one side(X1) of a semiconductor wafer. An electrode attaching part(14) is separated from the gate electrode and the source electrode and contacted with the drain electrode in the other side(X2) of the semiconductor wafer. A measuring terminal(10) is arranged in an end part of the semiconductor wafer to expose a terminal contact portion to one side of a thickness direction of the semiconductor wafer. An electrical characteristic of MOSFET(Metal Oxide Semiconductor Field Effect Transistor) is measured by contacting a probe terminal(15) to the gate electrode and the source electrode while contacting the probe terminal to the terminal contact portion in the measuring terminal.