| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device and a lithography mask is provided to improve yield by preventing deterioration of the optics imaging characteristic of an exposure apparatus and permitting high accuracy size control. CONSTITUTION: A device element property is formed by processing a first region through a sidewall transcription process(S10). A base structure is coated by a photosensitive layer(S11). The base structure and a photo mask are arranged(S12). The photosensitive layer is exposed through the photo mask(S13). A non-patterned first region and a patterned second region are formed by developing the photosensitive layer(S14).</p> |
