| 摘要 |
Methods of arc prevention during sputtering of a thin film from a semiconducting target 104 onto a substrate 12 are provided. An alternating current (e.g., having a frequency of about 500 kHz to 15 MHz) can be applied from an electrical power supply 102 to the semiconducting target 104 to form a plasma field 110 between the substrate 12 and the semiconducting target 104. This alternating current can be temporarily interrupted for a time sufficient to sustain the plasma field 110 between the substrate 12 and the semiconducting target 104 to inhibit arc formation during sputtering. Sputtering systems are also generally provided for arc prevention during sputtering of a thin film from a semiconducting target 104 onto a substrate 12. |
