Method for producing a TMR construction element

摘要

The method involves ion-beam sputtering of a ferromagnetic layer (B1) by ion beam till a thin insulation layer (B3) e.g. aluminum oxide layer, is exposed, where the beam inclinedly impinges on a stack surface. A protection layer i.e. silicon dioxide layer, on a structured contact layer (B5) and the exposed insulation layer is separated. A protruding passage is formed by the protection layer. The insulation layer and another ferromagnetic layer (B2) are ion beam-sputtered by the ion beam except a carrier (A) i.e. substrate, where the beam perpendicularly impinges on the stack surface. The contact layer in anisotropically etched with tetrafluoromethane.