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发明名称
Transistor gate electrode having conductor material layer
摘要
申请公布号
EP2136404(B1)
申请公布日期
2012.01.25
申请号
EP20090012031
申请日期
2004.12.22
申请人
INTEL CORPORATION
发明人
MURPHY, ANAND;BOYANOV, BOYAN;DATTA, SUMAN;DOYLE, BRIAN, S.;JIN, BEEN-YIH;YU, SHAOFENG;CHAU, ROBERT
分类号
H01L29/10;H01L21/28;H01L21/8234;H01L21/8238;H01L29/49
主分类号
H01L29/10
代理机构
代理人
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