| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition that is not only excellent in line edge roughness but also excellent in water following performance, and to provide a pattern-forming method using the same. <P>SOLUTION: A positive resist composition comprises (A) a resin in which its solubility in an alkali developer is increased by action of an acid and which does not contain a silicon atom, (B) a compound that generates an acid upon irradiation with actinic ray or radiation, (C) a silicon atom-containing resin having at least one group selected from groups (X) to (Z), and (D) a solvent, wherein: (X) is an alkali-soluble group; (Y) is a group capable of decomposing by action of an alkali developer to increase the solubility of resin (C) in an alkali developer; and (Z) is a group capable of decomposing by action of an acid to increase the solubility of resin (C) in an alkali developer. The pattern forming method using the same is also provided. <P>COPYRIGHT: (C)2008,JPO&INPIT |
