| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent a bending phenomenon of a bottom electrode by forming a plurality of nitride layers for an NFC which support the bottom electrode. CONSTITUTION: A sacrificial insulation layer is formed on a semiconductor substrate. The semiconductor substrate includes a cell region, a dummy cell region, and a bottom electrode contact plug. A dummy bottom electrode(185) and a support layer are connected to the bottom electrode contact plug of the dummy cell region. A bottom electrode(210) is connected to the bottom electrode contact plug of the cell region. An etch stop layer(130) is deposited between the bottom electrode contact plug and the sacrificial insulation layer. A nitride layer for the NFC is formed between laminate structures of PSG(Phosphorous Silicate Glass) layer and TEOS(Tetra Ethyl Ortho Silicate) layer.
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