SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent a crack or defect by reducing stress applied to a nitride layer for an NFC(Nitride Floating Cap). CONSTITUTION: A nitride layer for an NFC(Nitride Floating Cap) and a first sacrificial insulation layer are formed on a semiconductor substrate. An etch stopping layer is formed between the semiconductor substrate and the first sacrificial insulation layer. A lower electrode region is formed by etching a first sacrificial insulation layer and a nitride layer for the NFC until the semiconductor substrate is exposed. A lower electrode(160) is formed on the lower electrode region. A division region(130') is formed by etching the nitride layer for the NFC.