Method of manufacturing a piezoelectric transistor

摘要

According to the present application, a method of manufacturing a piezoelectric transistor may include forming a cavity over a substrate, such as a semiconductor substrate. The method may include depositing and patterning metal material over a portion of a cavity, and may include depositing an oxide film over a cavity and/or patterned metal material. Piezoelectric material may be deposited over an oxide film and patterned to avoid connection with metal material. The method may include depositing a second oxide film over a substrate including piezoelectric material. Metal wiring may be formed and may apply voltage to piezoelectric material that may be in contact with a semiconductor substrate.