发明名称 Graphene device and method of manufacturing the same
摘要 Provided is a graphene device and a method of manufacturing the same. The graphene device may include an upper oxide layer on at least one embedded gate, and a graphene channel and a plurality of electrodes on the upper oxide layer. The at least one embedded gate may be formed on the substrate. The graphene channel may be formed on the plurality of electrodes, or the plurality of electrodes may be formed on the graphene channel.
申请公布号 US8101980(B2) 申请公布日期 2012.01.24
申请号 US20100805933 申请日期 2010.08.25
申请人 HEO JIN-SEONG;SEO SUN-AE;KIM DONG-CHUL;WOO YUN-SUNG;CHUNG HYUN-JONG;SAMSUNG ELECTRONICS CO., LTD. 发明人 HEO JIN-SEONG;SEO SUN-AE;KIM DONG-CHUL;WOO YUN-SUNG;CHUNG HYUN-JONG
分类号 H01L29/778;H01L21/00;H01L21/78 主分类号 H01L29/778
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