发明名称 |
Graphene device and method of manufacturing the same |
摘要 |
Provided is a graphene device and a method of manufacturing the same. The graphene device may include an upper oxide layer on at least one embedded gate, and a graphene channel and a plurality of electrodes on the upper oxide layer. The at least one embedded gate may be formed on the substrate. The graphene channel may be formed on the plurality of electrodes, or the plurality of electrodes may be formed on the graphene channel. |
申请公布号 |
US8101980(B2) |
申请公布日期 |
2012.01.24 |
申请号 |
US20100805933 |
申请日期 |
2010.08.25 |
申请人 |
HEO JIN-SEONG;SEO SUN-AE;KIM DONG-CHUL;WOO YUN-SUNG;CHUNG HYUN-JONG;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HEO JIN-SEONG;SEO SUN-AE;KIM DONG-CHUL;WOO YUN-SUNG;CHUNG HYUN-JONG |
分类号 |
H01L29/778;H01L21/00;H01L21/78 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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地址 |
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