发明名称 Bi-directional transistor with by-pass path and method therefor
摘要 In one embodiment, a transistor is formed to have a first current flow path to selectively conduct current in both directions through the transistor and to have a second current flow path to selectively conduct current in one direction.
申请公布号 US8101969(B2) 申请公布日期 2012.01.24
申请号 US201113023255 申请日期 2011.02.08
申请人 ROBB FRANCINE Y.;ROBB STEPHEN P.;SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC 发明人 ROBB FRANCINE Y.;ROBB STEPHEN P.
分类号 H01L29/66 主分类号 H01L29/66
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