发明名称 |
Group III nitride substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device |
摘要 |
A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface is not more than 3×1013; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface is not more than 3×1013, and a haze level of the surface is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×1014, and a haze level of the surface is not more than 5 ppm. |
申请公布号 |
US8101968(B2) |
申请公布日期 |
2012.01.24 |
申请号 |
US201113016497 |
申请日期 |
2011.01.28 |
申请人 |
ISHIBASHI KEIJI;HACHIGO AKIHIRO;IRIKURA MASATO;NAKAHATA SEIJI;SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
ISHIBASHI KEIJI;HACHIGO AKIHIRO;IRIKURA MASATO;NAKAHATA SEIJI |
分类号 |
H01L33/00;H01L33/16;H01L33/32 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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