发明名称 |
Semiconductor device with (110)-oriented silicon |
摘要 |
A method of forming a semiconductor device on a heavily doped P-type (110) semiconductor layer over a metal substrate includes providing a first support substrate and forming a P-type heavily doped (110) silicon layer overlying the first support substrate. At least a top layer of the first support substrate is removable by a selective etching process with respect to the P-type heavily doped (110) silicon layer. A vertical semiconductor device structure is formed in and over the (110) silicon layer. The vertical device structure includes a top metal layer and is characterized by a current conduction in a <110> direction. The method includes bonding a second support substrate to the top metal layer and removing the first support substrate using a mechanical grinding and a selective etching process to expose a surface of the P-type heavily doped (110) silicon layer and to allow a metal layer to be formed on the surface. |
申请公布号 |
US8101500(B2) |
申请公布日期 |
2012.01.24 |
申请号 |
US20080174030 |
申请日期 |
2008.07.16 |
申请人 |
WANG QI;LI MINHUA;SOKOLOV YURI;FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
WANG QI;LI MINHUA;SOKOLOV YURI |
分类号 |
H01L21/30 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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