| 摘要 |
One or more embodiments relate to a method of forming a semiconductor device, including: providing a substrate; forming a gate stack over the substrate, the gate stack including a control gate over a charge storage layer; forming a conductive layer over the gate stack; etching the conductive layer to remove a portion of the conductive layer; and forming a select gate, the forming the select gate comprising etching a remaining portion of the conductive layer. |
