| 发明名称 |
Integrated MOSFET and Schottky device |
| 摘要 |
A power semiconductor device that includes a trench power MOSFET with deep source field electrodes and an integrated Schottky diode. |
| 申请公布号 |
US8101995(B2) |
申请公布日期 |
2012.01.24 |
| 申请号 |
US20080028239 |
申请日期 |
2008.02.08 |
| 申请人 |
HENSON TIMOTHY;GIRDHAR DEV ALOK;INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
HENSON TIMOTHY;GIRDHAR DEV ALOK |
| 分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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