| 摘要 |
A first passive part forms a second parallel resonance circuit having a resonance frequency near the passing band among a first to a third parallel resonance circuit as follows. That is, the second parallel resonance circuit is formed at a position farthest from a first shield electrode and farthest from a second shield electrode in a region sandwiched by the first shield electrode and the second shield electrode in a dielectric substrate (in this example, on the main surface of a seventh dielectric layer and the main surface of an eighth dielectric layer located at a center portion in the layering direction of the region). |
