发明名称 Capacitors and methods of manufacture thereof
摘要 Capacitors are formed in metallization layers of semiconductor device in regions where functional conductive features are not formed, more efficiently using real estate of integrated circuits. The capacitors may be stacked and connected in parallel to provide increased capacitance, or arranged in arrays. The plates of the capacitors are substantially the same dimensions as conductive features, such as conductive lines or vias, or are substantially the same dimensions as fill structures of the semiconductor device.
申请公布号 US8101985(B2) 申请公布日期 2012.01.24
申请号 US20100912543 申请日期 2010.10.26
申请人 HIERLEMANN MATTHIAS;INFINEON TECHNOLOGIES AG 发明人 HIERLEMANN MATTHIAS
分类号 H01L27/108 主分类号 H01L27/108
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