发明名称 |
Method of manufacturing an inverted bottom-emitting OLED device |
摘要 |
A method of making an inverted bottom-emitting OLED device, comprising: providing a substrate; providing one or more first electrodes driven by n-type transistors on the substrate; providing an electron-transporting layer over the substrate and first electrode(s), wherein the electron-transporting layer comprises an n-type inorganic semiconductive material with a resistivity in the range of 1 to 105 ohm-cm and a bandgap greater than 2.5 eV; providing an organic light-emitting layer over the electron-transporting layer; providing a hole-transporting layer over the organic emitting layer; and providing a second electrode over the hole-transporting layer. |
申请公布号 |
US8102114(B2) |
申请公布日期 |
2012.01.24 |
申请号 |
US20090394077 |
申请日期 |
2009.02.27 |
申请人 |
TUTT LEE W.;FELLER THERESE M.;COWDERY-CORVAN PETER J.;GLOBAL OLED TECHNOLOGY, LLC. |
发明人 |
TUTT LEE W.;FELLER THERESE M.;COWDERY-CORVAN PETER J. |
分类号 |
H01L51/50 |
主分类号 |
H01L51/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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