发明名称 |
Method of producing a thin layer of semiconductor material |
摘要 |
A semiconductor structure includes a thin semiconductor layer fixed on an applicator or flexible support, the thin layer having an exposed surface characterized by fractured solid bridges spaced apart by cavities. A method of producing the thin layer of semiconductor material includes implanting ions into the semiconductor wafer to define a reference plane, where the ion dose is above a minimum dose, but below a critical dose so as to avoid degrading the wafer surface. The method further includes applying a thermal treatment to define a layer of microcavities and applying stress to free the thin layer from the wafer.
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申请公布号 |
US8101503(B2) |
申请公布日期 |
2012.01.24 |
申请号 |
US20080334086 |
申请日期 |
2008.12.12 |
申请人 |
ASPAR BERNARD;BRUEL MICHEL;POUMEYROL THIERRY;COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
ASPAR BERNARD;BRUEL MICHEL;POUMEYROL THIERRY |
分类号 |
H01L21/265;H01L21/322;H01L21/02;H01L21/304;H01L21/762;H01L27/12 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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