发明名称 Method of producing a thin layer of semiconductor material
摘要 A semiconductor structure includes a thin semiconductor layer fixed on an applicator or flexible support, the thin layer having an exposed surface characterized by fractured solid bridges spaced apart by cavities. A method of producing the thin layer of semiconductor material includes implanting ions into the semiconductor wafer to define a reference plane, where the ion dose is above a minimum dose, but below a critical dose so as to avoid degrading the wafer surface. The method further includes applying a thermal treatment to define a layer of microcavities and applying stress to free the thin layer from the wafer.
申请公布号 US8101503(B2) 申请公布日期 2012.01.24
申请号 US20080334086 申请日期 2008.12.12
申请人 ASPAR BERNARD;BRUEL MICHEL;POUMEYROL THIERRY;COMMISSARIAT A L'ENERGIE ATOMIQUE 发明人 ASPAR BERNARD;BRUEL MICHEL;POUMEYROL THIERRY
分类号 H01L21/265;H01L21/322;H01L21/02;H01L21/304;H01L21/762;H01L27/12 主分类号 H01L21/265
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