发明名称 |
Structure, design structure and method of manufacturing a structure having VIAS and high density capacitors |
摘要 |
A method of making a semiconductor structure includes forming at least a first trench and a second trench having different depths in a substrate, forming a capacitor in the first trench, and forming a via in the second trench. A semiconductor structure includes a capacitor arranged in a first trench formed in a substrate and a via arranged in a second trench formed in the substrate. The first and second trenches have different depths in the substrate. |
申请公布号 |
US8101494(B2) |
申请公布日期 |
2012.01.24 |
申请号 |
US20080191379 |
申请日期 |
2008.08.14 |
申请人 |
COLLINS DAVID S.;FENG KAI D.;HE ZHONG-XIANG;LINDGREN PETER J.;RASSEL ROBERT M.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COLLINS DAVID S.;FENG KAI D.;HE ZHONG-XIANG;LINDGREN PETER J.;RASSEL ROBERT M. |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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