发明名称 |
Capacitor of semiconductor device and method for manufacturing the same |
摘要 |
A capacitor of a semiconductor device and a method for manufacturing the same includes a lower metal layer on and/or over a semiconductor substrate; an insulating layer formed on and/or over the lower metal layer with step difference; and an upper electrode on and/or over the insulating layer pattern, wherein a top corner of the upper electrode is rounded so that a curvature pattern is formed on the top corner of the upper electrode. |
申请公布号 |
US8101493(B2) |
申请公布日期 |
2012.01.24 |
申请号 |
US20090648910 |
申请日期 |
2009.12.29 |
申请人 |
LEE YONG-JUN;DONGBU HITEK CO., LTD. |
发明人 |
LEE YONG-JUN |
分类号 |
H01L29/02 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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