发明名称 Nonvolatile memory system
摘要 A memory system permitting a number of alternative memory blocks to be made ready in order to extend the rewritable life and thereby contributing to enhanced reliability of information storage is to be provided. The memory system is provided with a nonvolatile memory having a plurality of data blocks in predetermined physical address units and a controller for controlling the nonvolatile memory in response to an access request from outside. Each of the data blocks has areas for holding a rewrite count and error check information regarding each data area. The controller, in a read operation on the nonvolatile memory, checks for any error in the area subject to the read according to error check information and, when there is any error, if the rewrite count is greater than a predetermined value, will replace the pertinent data block with another data block or if it is not greater, correct data in the data block pertaining to the error.
申请公布号 US8103899(B2) 申请公布日期 2012.01.24
申请号 US20080245203 申请日期 2008.10.03
申请人 SHIOTA SHIGEMASA;GOTO HIROYUKI;SHIBUYA HIROFUMI;HARA FUMIO;MITANI KINJI;RENESAS ELECTRONICS CORPORATION 发明人 SHIOTA SHIGEMASA;GOTO HIROYUKI;SHIBUYA HIROFUMI;HARA FUMIO;MITANI KINJI
分类号 G06F11/00;G06F12/16;G06F12/00;G11C16/34;G11C29/00 主分类号 G06F11/00
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