发明名称 |
Method for formation of miniaturized pattern and resist substrate treatment solution for use in the method |
摘要 |
The present invention provides a method for miniaturizing a pattern without seriously increasing the production cost or impairing the production efficiency. This invention also provides a fine resist pattern and a resist substrate-treating solution used for forming the fine pattern. The pattern formation method comprises a treatment step. In the treatment step, a resist pattern after development is treated with a resist substrate-treating solution containing an amino group-containing, preferably, a tertiary polyamine-containing water-soluble polymer, so as to reduce the effective size of the resist pattern formed by the development. The present invention also relates to a resist pattern formed by that method, and further relates to a treating solution used in the method.
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申请公布号 |
US8101333(B2) |
申请公布日期 |
2012.01.24 |
申请号 |
US20070311725 |
申请日期 |
2007.10.12 |
申请人 |
NOYA GO;SHIMAZAKI RYUTA;KOBAYASHI MASAKAZU;AZ ELECTRONIC MATERIALS USA CORP. |
发明人 |
NOYA GO;SHIMAZAKI RYUTA;KOBAYASHI MASAKAZU |
分类号 |
G03F7/00;G03F7/004;G03F7/032;G03F7/40 |
主分类号 |
G03F7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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