| 摘要 |
<p>PURPOSE: A semiconductor device and a forming method thereof are provided to control the deterioration of a semiconductor device by preventing the increase of displacement density generated from a gate which is adjacent to a device isolation film with the reduction of a dielectric constant of the device isolation film. CONSTITUTION: An air gap(118) is included in a semiconductor substrate(100). An active area(104) is defined with the air gap. A recess gate(108) is formed in the air gap and the active area. A landing plug(114) of porosity is connected to the active area neighboring with the air gap. An inter-layer insulating film(110) fills an interval between the gates.</p> |
