| 摘要 |
PURPOSE: A semiconductor device and a forming method thereof are provided to improve a property of a semiconductor device by minimizing GIDL and forming a gate oxide film by using an oxidation rate difference without an additional mask process. CONSTITUTION: A vertical pillar(126) is perpendicularly projected from a semiconductor substrate(100). A first junction area(106) is included on an upper portion of the vertical pillar. A second junction area is included on a lower portion of the vertical pillar. A barrier metal pattern(132b) and a gate pattern(134b) are included on a sidewall of the vertical pillar. A silicon nitride film pattern(136) is included on the upper portion of the gate pattern.
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