A POWER SEMICONDUCTOR DEVICE AND METHODS FOR FABRICATING THE SAME

摘要

PURPOSE: A power semiconductor device and manufacturing method thereof are provided to multiply break down voltage while minimizing the increase of junction field effect transistor resistance by reducing an electric field of an edge. CONSTITUTION: The drift region(104) of a first conductivity type is formed on a drain region(102). The first body region(106) of a second conductive type is formed under the top surface of the drift region. A second body region(107) of the second conductive type is formed under the surface of the drift region and within the first body region. A third body region(109) of the second conductive type is projected down in the bottom of the first body region. A source region(108) of the first conductivity type is formed under the top surface of the drift region and within the first body region.