发明名称 |
POSITIVE PHOTORESIST FOR COPPER BASED METAL FILM COMPOSITION AND PATTERNING METHOD OF PHOTORESIST USING THE SAME |
摘要 |
<p>PURPOSE: A positive photo-resist composition for a copper-based metal film and a method for forming a photo-resist pattern using the same are provided to prevent the collapse and the delamination of patterns in a developing process or an etching process. CONSTITUTION: A positive photo-resist composition includes 10-25 weight% of an alkali-soluble resin, 1-10 weight% of a photo-sensitive compound, 0.01-0.1 weight% of a compound represented by chemical formula 1, and remaining amount of a solvent based on the total weight of the composition. In the chemical formula 1, the R1 is hydrogen or hydroxyl group. The R2 and the R3 are respectively hydrogen, C1 to C5 alkyl group, or C6 to C15 aryl group. The alkali-soluble resin is a novolak resin.</p> |
申请公布号 |
KR20120007341(A) |
申请公布日期 |
2012.01.20 |
申请号 |
KR20100068056 |
申请日期 |
2010.07.14 |
申请人 |
DONGWOO FINE-CHEM CO., LTD. |
发明人 |
IM, MIN JU;LEE, EUN SANG;CHANG, WON YOUNG;YOON, JONG HEUM |
分类号 |
G03F7/039;G03F7/022;H01L21/027 |
主分类号 |
G03F7/039 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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