| 摘要 |
An SRAM with buffered-read bit cells is disclosed (FIGS. 1-6). The integrated circuit includes a plurality of memory cells (102). Each memory cell has a plurality of transistors (200, 202). A first memory cell (FIG. 2) is arranged to store a data signal in response to an active write word line (WWL) and to produce the data signal in response to an active read word line (RWL). A test circuit (104) formed on the integrated circuit is operable to test current and voltage characteristics of each transistor of the plurality of transistors of the first memory cell (FIGS. 7-10).
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