| 摘要 |
<p>This light emitting diode comprises a pn junction light emitting part which has a light emitting layer (10) that is composed of n-number of strained light emitting layers (12) and (n - 1)-number of barrier layers (13). In cases where there is a barrier layer, the light emitting layer (10) has a structure wherein one strained light emitting layer (12) and one barrier layer (13) are alternately arranged. In this connection, n is an integer of 1-7, and the thickness of the light emitting layer (10) is set to 250 nm or less.</p> |
