发明名称 SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device which enhances packaging density of chips by forming a fine through-hole via in simple processing steps without forming a via hole in a resin layer of a pseudo wafer by laser and the like. <P>SOLUTION: The semiconductor manufacturing method comprises the steps of disposing a plurality of semiconductor chips 20 and a metal structure 25 having a plurality of protrusions 25a on predetermined places on a support base plate 11, coating the plurality of semiconductor chips 20 and the metal structure 25 with resin and solidifying the resin, removing a part of solidified resin and a part of the metal structure to flatten a surface, exposing the protrusions 25a of the metal structure as through-hole vias, delaminating a resin layer in which the semiconductor chips and the through-hole vias are embedded from the support base plate, and forming a predetermined wiring pattern on a surface from which the resin layer is delaminated to shape into a pseudo wafer. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012015216(A) 申请公布日期 2012.01.19
申请号 JP20100148299 申请日期 2010.06.29
申请人 FUJITSU LTD 发明人 MIZUKOSHI MASATAKA;ISHIZUKI YOSHIKATSU
分类号 H01L25/04;H01L25/10;H01L25/11;H01L25/18;H05K3/46 主分类号 H01L25/04
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