| 摘要 |
<P>PROBLEM TO BE SOLVED: To appropriately form a metal film on a substrate using a metal mixture liquid while appropriately controlling a treatment atmosphere. <P>SOLUTION: An inside of a treatment container 10 of a metal-film forming device 1 can be switched between an atmospheric-pressure or reduced-pressure inert gas atmosphere. A spin chuck 20 holding a wafer W, a cup body 31 provided so as to enclose the sides of the wafer W, a coating nozzle 60 discharging a metal mixture liquid on the wafer W, a nozzle transmission part 64 transmitting the power of a nozzle driving part 65 to the coating nozzle 60, and a nozzle bath 66 allowing the coating nozzle 60 to wait are provided inside the treatment container 10. At the outside of the treatment container 10, the nozzle driving part 65 for moving the coating nozzle 60 between the spin chuck 20 and the nozzle bath 66 along a direction inclined at a predetermined angle from a horizontal direction is provided. <P>COPYRIGHT: (C)2012,JPO&INPIT |
