发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME |
摘要 |
According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting part provided therebetween. The light emitting part includes a plurality of light emitting layers. Each of the light emitting layers includes a well layer region and a non-well layer region which is juxtaposed with the well layer region in a plane perpendicular to a first direction from the n-type semiconductor layer towards the p-type semiconductor layer. Each of the well layer regions has a common An In composition ratio. Each of the well layer regions includes a portion having a width in a direction perpendicular to the first direction of 50 nanometers or more.
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申请公布号 |
US2012012814(A1) |
申请公布日期 |
2012.01.19 |
申请号 |
US201113035304 |
申请日期 |
2011.02.25 |
申请人 |
HARADA YOSHIYUKI;HIKOSAKA TOSHIKI;SHIODA TOMONARI;TACHIBANA KOICHI;NAGO HAJIME;NUNOUE SHINYA;KABUSHIKI KAISHA TOSHIBA |
发明人 |
HARADA YOSHIYUKI;HIKOSAKA TOSHIKI;SHIODA TOMONARI;TACHIBANA KOICHI;NAGO HAJIME;NUNOUE SHINYA |
分类号 |
H01L33/06;H01L33/08 |
主分类号 |
H01L33/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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