发明名称 Conductive Sidewall for Microbumps
摘要 Electromigration in microbump connections causes voids in the microbumps, which reduces the lifetime of an integrated circuit containing the microbump. Electromigration lifetime may be increased in microbumps by forming a copper shell around the solder. The copper shell of one microbump contacts the copper shell of a second microbump to enclose the solder of the microbump connection. The copper shell allows higher current densities through the microbump. Thus, smaller microbumps may be manufactured on a smaller pitch without suffering failure from electromigration. Additionally, the copper shell reduces shorting or bridging between microbump connections on a substrate.
申请公布号 US2012012998(A1) 申请公布日期 2012.01.19
申请号 US20100837717 申请日期 2010.07.16
申请人 CHANDRASEKARAN ARVIND;GU SHIQUN;HAY-RIEGE CHRISTINE S.;QUALCOMM INCORPORATED 发明人 CHANDRASEKARAN ARVIND;GU SHIQUN;HAY-RIEGE CHRISTINE S.
分类号 H01L23/498;H01L21/60;H01L21/768 主分类号 H01L23/498
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