发明名称 |
Conductive Sidewall for Microbumps |
摘要 |
Electromigration in microbump connections causes voids in the microbumps, which reduces the lifetime of an integrated circuit containing the microbump. Electromigration lifetime may be increased in microbumps by forming a copper shell around the solder. The copper shell of one microbump contacts the copper shell of a second microbump to enclose the solder of the microbump connection. The copper shell allows higher current densities through the microbump. Thus, smaller microbumps may be manufactured on a smaller pitch without suffering failure from electromigration. Additionally, the copper shell reduces shorting or bridging between microbump connections on a substrate.
|
申请公布号 |
US2012012998(A1) |
申请公布日期 |
2012.01.19 |
申请号 |
US20100837717 |
申请日期 |
2010.07.16 |
申请人 |
CHANDRASEKARAN ARVIND;GU SHIQUN;HAY-RIEGE CHRISTINE S.;QUALCOMM INCORPORATED |
发明人 |
CHANDRASEKARAN ARVIND;GU SHIQUN;HAY-RIEGE CHRISTINE S. |
分类号 |
H01L23/498;H01L21/60;H01L21/768 |
主分类号 |
H01L23/498 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|