METHOD FOR DOPING A SEMICONDUCTOR MATERIAL

摘要

According to the invention, a load (4) of semiconductor material is placed in a crucible (1). A sealed sacrificial container (5) containing a dopant material (6) is placed inside the crucible (1). The contents of the crucible (1) are melted, thereby causing the dopant to be incorporated into the bath of molten material. The raising of the temperature is carried at a low pressure.