| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device with a novel structure that can hold storage content even without power supply, and that has no limitation in the number of times of writing. <P>SOLUTION: A semiconductor device comprises a second transistor provided on a first transistor, and a capacitive element. A gate electrode of the first transistor and a source electrode of the second transistor being in contact with the gate electrode are formed using materials that can provide an etching selection ratio between them. When the gate electrode of the first transistor and the source electrode of the second transistor are formed using materials that can provide an etching selection ratio, the layout margin can be reduced. Thus, the degree of integration of the semiconductor device can be improved. <P>COPYRIGHT: (C)2012,JPO&INPIT |
