发明名称 |
METHODS FOR FORMING BARRIER/SEED LAYERS FOR COPPER INTERCONNECT STRUCTURES |
摘要 |
Methods for forming barrier/seed layers for interconnect structures are provided herein. In some embodiments, a method of processing a substrate having an opening formed in a first surface of the substrate, the opening having a sidewall and a bottom surface, the method may include forming a layer comprising manganese (Mn) and at least one of ruthenium (Ru) or cobalt (Co) on the sidewall and bottom surface of the opening; and depositing a conductive material on the layer to fill the opening. In some embodiments, one of ruthenium (Ru) or cobalt (Co) is deposited on the sidewall and bottom surface of the opening. The materials may be deposited by chemical vapor deposition (CVD) or by physical vapor deposition (PVD).
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申请公布号 |
US2012012465(A1) |
申请公布日期 |
2012.01.19 |
申请号 |
US201113167001 |
申请日期 |
2011.06.23 |
申请人 |
KIM HOON;LEE WEI TI;YU SANG HO;GANGULI SESHADRI;HA HYOUNG-CHAN;LEE SANG HYEOB;APPLIED MATERIALS, INC. |
发明人 |
KIM HOON;LEE WEI TI;YU SANG HO;GANGULI SESHADRI;HA HYOUNG-CHAN;LEE SANG HYEOB |
分类号 |
C25D5/02 |
主分类号 |
C25D5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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