发明名称 Substrate Stand-Offs for Semiconductor Devices
摘要 Substrate stand-offs for use with semiconductor devices are provided. Active pillars and dummy pillars are formed on a first substrate such that the dummy pillars may have a height greater than a height of the active pillars. The dummy pillars act as stand-offs when joining the first substrate to a second substrate, thereby creating greater uniformity. In an embodiment, the dummy pillars may be formed simultaneously as the active pillars by forming a patterned mask having openings with a smaller width for the dummy pillars than for the active pillars. When an electro-plating process of the like is used to form the dummy and active pillars, the smaller width of the dummy pillar openings in the patterned mask causes the dummy pillars to have a greater height than the active pillars.
申请公布号 US2012012985(A1) 申请公布日期 2012.01.19
申请号 US20100835458 申请日期 2010.07.13
申请人 SHEN CHENG HUNG;KUO TIN-HAO;KUO CHEN-CHENG;CHEN CHEN-SHIEN;CHUANG YAO-CHUN;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 SHEN CHENG HUNG;KUO TIN-HAO;KUO CHEN-CHENG;CHEN CHEN-SHIEN;CHUANG YAO-CHUN
分类号 H01L29/30;H01L21/30 主分类号 H01L29/30
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