发明名称 |
TRANSMISSION GATE CIRCUITRY FOR HIGH VOLTAGE TERMINAL |
摘要 |
<p>A transmission gate circuit (11) includes a first transmission gate (201), having a first switching device (205), coupled in series with a second transmission gate (203), having a second switching device, and control circuitry which places the first transmission gate and the second transmission gate into a conductive state to provide a conductive path through the first transmission gate and the second transmission gate. When the voltage of the first terminal is above a first voltage level and outside a safe operating voltage area of at least one of the first and second switching device, the first switching device remains within its safe operating voltage area and the second switching device remains within its safe operating voltage area.</p> |
申请公布号 |
WO2012009042(A1) |
申请公布日期 |
2012.01.19 |
申请号 |
WO2011US35727 |
申请日期 |
2011.05.09 |
申请人 |
FREESCALE SEMICONDUCTOR, INC.;STOCKINGER, MICHAEL A.;CAMARENA, JOSE A.;ZHANG, WENZHONG |
发明人 |
STOCKINGER, MICHAEL A.;CAMARENA, JOSE A.;ZHANG, WENZHONG |
分类号 |
H03K17/16;H03K19/003 |
主分类号 |
H03K17/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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