GALLIUM NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, METHOD OF MANUFACTURING GALLIUM NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, GALLIUM NITRIDE LIGHT-EMITTING DIODE, EPITAXIAL WAFER, AND METHOD OF MANUFACTURING GALLIUM NITRIDE LIGHT-EMITTING DIODE

摘要

PROBLEM TO BE SOLVED: To provide a gallium nitride semiconductor light-emitting element having a structure capable of improving a polarization degree.

SOLUTION: A light-emitting diode 11a comprises a semiconductor region 13, an InGaN layer 15, and an active layer 17. The semiconductor region 13 has a semipolar primary surface 13a and is composed of GaN or AlGaN. The primary surface 13a of the semiconductor region 13 is inclined at an angle α from a plane Sc perpendicular to a reference axis Cx extending along the [0001] axis of the primary surface 13a. A thickness D13of the semiconductor region 13 is larger than a thickness DInGaNof the InGaN layer 15, and the thickness DInGaNof the InGaN layer 15 is 150 nm or more. The InGaN layer 15 is provided directly on the primary surface 13a of the semiconductor region 13. The active layer 17 is provided on a primary surface 15a of the InGaN layer 15. The active layer 17 includes an InGaN well layer 21.

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