| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide technology for a semiconductor device to reduce high-frequency distortion occurring at an antenna switch even when the antenna switch is constructed from a field effect transistor formed on a silicon substrate from the aspect of cost reduction of the antenna switch. <P>SOLUTION: The semiconductor device comprises a distortion compensation capacitance circuit CAPC2 connected to intermediate between each source region and each drain region of a plurality of MISFET Q<SB POS="POST">N1</SB>-Q<SB POS="POST">N5</SB>connected in series. The distortion compensation capacitance circuit CAPC2 has voltage dependency such that in either case where a positive voltage is applied to the drain region with reference to potential of the source region or case where a negative voltage is applied to the drain region with reference to potential of the source region, capacitance decreases more than that in the case where potential of the source region and potential of the drain electrode are equal. <P>COPYRIGHT: (C)2012,JPO&INPIT |
