发明名称 MEMORY DEVICE AND METHOD
摘要 A method of accessing a memory device multiple times in a same time period can include, in a first sequence of accesses, starting an access operation to one of a plurality of banks in synchronism with a first part of a first clock cycle and starting an access operation to another of the plurality of banks in synchronism with a second part of the first clock cycle, each bank having separate access circuits; and the time between consecutive accesses is faster than an access speed for back-to-back accesses to a same one of the banks; wherein during the access operations, storage locations of each bank are accessed in a same time period
申请公布号 US2012014202(A1) 申请公布日期 2012.01.19
申请号 US201113245856 申请日期 2011.09.26
申请人 TZOU JOSEPH;TRAN THINH;LI JUN;CYPRESS SEMICONDUCTOR CORPORATION 发明人 TZOU JOSEPH;TRAN THINH;LI JUN
分类号 G11C8/18 主分类号 G11C8/18
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