| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of reducing OH groups from a silicon oxide film containing OH groups at a low temperature by a simple method in order to ensure the performance of a TFT, i.e. interface characteristics and insulation, and to make a substrate inexpensive. <P>SOLUTION: The method of removing OH groups from a silicon oxide film includes a step of touching and immersing a silicon oxide film formed on a substrate at a low temperature and containing OH groups to an organic solvent, and a step of subsequently heating the silicon oxide film at a low temperature by thermal annealing. <P>COPYRIGHT: (C)2012,JPO&INPIT |
