| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a field-effect transistor (FET) capable of reducing on-resistance. <P>SOLUTION: An FET 101 comprises: a compound semiconductor substrate 1; a semiconductor stacked structure 10 that is formed on the compound semiconductor substrate 1 and includes a channel layer 5 in which n-type carriers are accumulated, a Schottky layer 8, and a cap layer 9 in that order when viewed from the substrate side; a gate electrode 20; a source electrode 21; and a drain electrode 22. The cap layer 9 includes a first InGaP layer 9A which is un-doped and has a natural superlattice structure or in which n-type carriers are injected, and a second InGaP layer 9B which has the natural superlattice structure and in which n-type carriers are injected, in that order when viewed from the Schottky layer 8 side. <P>COPYRIGHT: (C)2012,JPO&INPIT |
